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IXGR32N90B2D1

IXYS
Part Number IXGR32N90B2D1
Manufacturer IXYS
Description IGBT
Published Oct 28, 2015
Detailed Description Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 ...
Datasheet PDF File IXGR32N90B2D1 PDF File

IXGR32N90B2D1
IXGR32N90B2D1

Overview
Advance Technical Information HiPerFASTTM IGBT IXGR 32N90B2D1 with Fast Diode Electrically Isolated Base V I CES VC25 t CE(sat) fi typ = 900 V = 47 A = 2.
9 V = 150 ns Symbol Test Conditions VCES VCGR TJ = 25OC to 150OC TJ = 25OC to 150OC; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC110 ICM TC = 25OC TC = 110OC TC = 25OC, 1 ms SSOA (RBSOA) PC VGE= 15 V, TVJ = 125OC, RG = 10 Ω Clamped inductive load: VCL < 600V TC = 25OC TJ TJM Tstg Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s VISOL FC Weight 50/60Hz, RMS, T= I minute Iisol < 1mA Mounting force Maximum Ratings 900 V 900 V ±20 V ±30 V 47 A 22 A 200 A ICM = 64 A 160 -55 .
.
.
+150 150 -55 .
.
.
+150 300 W OC OC OC OC 2500 3000 20.
.
120/4.
5.
.
26 5 V~ V~ N/lb g Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25OC unless otherwise specified) min.
typ.
max.
IC = 250 μA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ± 20 V IC = IT, VGE = 15 V, Note...


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