Part Number
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STQ1HN60K3-AP |
Manufacturer
|
STMicroelectronics |
Description
|
N-CHANNEL MOSFET |
Published
|
Oct 31, 2015 |
Detailed Description
|
STQ1HN60K3-AP
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet − production dat...
|
Datasheet
|
STQ1HN60K3-AP
|
Overview
STQ1HN60K3-AP
N-channel 600 V, 6.
7 Ω typ.
, 0.
4 A SuperMESH3™ Power MOSFET in a TO-92 package
Datasheet − production data
3 2 1
TO-92
Figure 1.
Internal schematic diagram
D(2)
Features
Order code
VDS
STQ1HN60K3-AP 600 V
RDS(on) max
8Ω
ID PTOT 0.
4 A 3 W
• 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery
characteristics • Zener-protected
Applications
• Switching applications
G(1) S(3)
AM01476v1
Description
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
This device boasts...
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