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STQ1HN60K3-AP

Part Number	STQ1HN60K3-AP
Manufacturer	STMicroelectronics
Description	N-CHANNEL MOSFET
Published	Oct 31, 2015
Detailed Description	STQ1HN60K3-AP N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package Datasheet − production dat...
Datasheet	STQ1HN60K3-AP PDF File

Overview

STQ1HN60K3-AP N-channel 600 V, 6.
7 Ω typ.
, 0.
4 A SuperMESH3™ Power MOSFET in a TO-92 package Datasheet − production data 3 2 1 TO-92 Figure 1.
Internal schematic diagram D(2) Features Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.
4 A 3 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
This device boasts...

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STQ1HN60K3-AP N-CHANNEL MOSFET - STMicroelectronics

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