DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3386
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect
Transistor
designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3386
PACKAGE TO-251
FEATURES
• Low On-state Resistance 5 RDS(on)1 = 21 mΩ MAX.
(VGS = 10 V, ID = 17 A) 5 RDS(on)2 = 36 mΩ MAX.
(VGS = 4.
0 V, ID = 17 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in Gate Protection Diode • TO-251/TO-252 package
2SK3386-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC) 5 Drain Current (Pulse) Note1 5 Total Power Dissipation (T...