A-GA10JT12

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Best in class temperature independent switching and blocking performance • Lowest VDS(ON) as compared to any other SiC switch •Suitable for connecting an anti-parallel diod...