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A-GA10JT12

Part Number	A-GA10JT12
Manufacturer	GeneSiC
Description	Super Junction Transistor
Published	Nov 10, 2015
Detailed Description	Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 ...
Datasheet	A-GA10JT12 PDF File

Overview

Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features • 225 oC maximum operating temperature •Best in class temperature independent switching and blocking performance • Lowest VDS(ON) as compared to any other SiC switch •Suitable for connecting an anti-parallel diode •Gate oxide free SiC switch •Positive temperature coefficient for easy paralleling •Low gate charge •Low intrinsic capacitance Advantages • Low switching losses •Higher efficiency Package D G S Applications • Ideal for Aerospace and Defense Applications •Down Hole Oil Drilling, Geothermal Instrumentation •Hybrid Electric Vehicles (HEV) •Solar Inverters • Switched-Mode Power Supply (SMPS) •Power Factor Correction (PFC) • Induction Heating • Uninterruptible Power Supply (UPS) • Motor Drives Maximum Ratings, at Tj = 175 °C, unless otherwise specified Parameter Drain – Source Voltage DC-Drain Current Gate Peak Current Po...

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A-GA10JT12 Super Junction Transistor - GeneSiC

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