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SPB08P06PG

Part Number SPB08P06PG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 10, 2015
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
Datasheet SPB08P06PG




Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.
3 Ω -8.
8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 08P06P Yes Packing Non dry Value steady state -8.
8 -6.
3 -35.
32 Unit A Avalanche energy,...






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