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SPB08P06P

Infineon Technologies
Part Number SPB08P06P
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jun 7, 2005
Detailed Description SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temp...
Datasheet PDF File SPB08P06P PDF File

SPB08P06P
SPB08P06P

Overview
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.
3 Ω -8.
8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Value Unit steady state -8.
8 A -6.
3 -35.
32 Avalanche energy, single pulse E AS I D=8.
83 A, R GS=25 Ω 70 mJ Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature dv /dt I D=8.
83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C V GS P tot T A=25 °C T j, T stg ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 -6 ±20 42 "-55 .
.
.
+175" kV/µs V W °C 260 °C 55/150/56 Rev 1.
7 page 1 2012-09-07 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Symbol Conditions SPB08P06P G min.
Values typ.
Unit max.
R thJC - R thJA - R thJA minimal footprint - 6 cm2 cooling area1) - - 3.
6 K/W - 62 - 62 K/W - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.
1 3 -V -4 Zero gate voltage drain current Gate-source leakage current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - V DS=-60 V, V GS=0 V, T j=150 °C - I GSS V GS=-20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-6.
2 A - -0.
1 -1 µA -10 -100 -10 -100 nA 221 300 mΩ Transconductance g fs |V DS|>2|I D...


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