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Part Number
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TXY8205A |
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Manufacturer
|
TMOS |
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Description
|
Dual N-CHANNEL High Density Trench MOSFET |
|
Published
|
Nov 25, 2015 |
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Detailed Description
|
Dual N-Channel High Density Trench MOSFET N
TYPE
BVDSS
-
TXY8205A
20V
ID
6A
RDS(ON) (Typ.)
()
23mΩ @VGS=4.5V ...
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|
Datasheet
|
TXY8205A
|
Overview
Dual N-Channel High Density Trench MOSFET N
TYPE
BVDSS
-
TXY8205A
20V
ID
6A
RDS(ON) (Typ.
)
()
23mΩ @VGS=4.
5V 34mΩ @VGS=2.
5V
FEATURES
High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product)
PIN CONFIGURATION
TXY8205A
ORDERING INFORMATION
Device
Package
TXY8205A
TSSOP-8
Packing
Tape Reel
www.
tmos.
com.
tw
1
DS-Rev-1.
4
TXY8205A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃ unless otherwise specified)
Symbol
Parameter
Value
VDSS
Drain-Source Voltage (VGS=0V ) -
20
VGSS ID (a)
Gate- source Voltage - Drain Current (continuous)
at TC = 25℃ at TC = 70℃
±12
6 4
IDM (b)
Drain Current (pulse...
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