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TXY8205A

TMOS
Part Number TXY8205A
Manufacturer TMOS
Description Dual N-CHANNEL High Density Trench MOSFET
Published Nov 25, 2015
Detailed Description Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V ...
Datasheet PDF File TXY8205A PDF File

TXY8205A
TXY8205A

Overview
Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.
) () 23mΩ @VGS=4.
5V 34mΩ @VGS=2.
5V FEATURES High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product) PIN CONFIGURATION TXY8205A ORDERING INFORMATION Device Package TXY8205A TSSOP-8 Packing Tape Reel www.
tmos.
com.
tw 1 DS-Rev-1.
4 TXY8205A ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃ unless otherwise specified) Symbol Parameter Value VDSS Drain-Source Voltage (VGS=0V ) - 20 VGSS ID (a) Gate- source Voltage - Drain Current (continuous) at TC = 25℃ at TC = 70℃ ±12 6 4 IDM (b) Drain Current (pulsed) 28 Power Dissipation Ptot 2.
0 Tj , Tstg Operating Junction and Storage Temperature Range - 55~150 (a) Current limited by package (b) Pulse test: Pulse width≦300us, duty cycle≦2% ：≦300us，≦2％ THERMAL DATA RθJA Thermal Resistance – Junction to Ambient - 62.
5 Unit V A W ℃ ℃ /W ELEC...


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