Part Number
|
IRFB9N30APBF |
Manufacturer
|
International Rectifier |
Description
|
POWER MOSFET |
Published
|
Nov 26, 2015 |
Detailed Description
|
l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple ...
|
Datasheet
|
IRFB9N30APBF
|
Overview
l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements
l Lead-Free
PD- 95350
IRFB9N30APbF
HEXFET® Power MOSFET
D
VDSS = 300V
RDS(on) = 0.
45Ω
G
ID = 9.
3A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry...
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