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IRFB9N30APBF

International Rectifier
Part Number IRFB9N30APBF
Manufacturer International Rectifier
Description POWER MOSFET
Published Nov 26, 2015
Detailed Description l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple ...
Datasheet PDF File IRFB9N30APBF PDF File

IRFB9N30APBF
IRFB9N30APBF

Overview
l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Fast Switching l Ease of Paraleing l Dynamic dv/dt Rated l Simple Drive Requirements l Lead-Free PD- 95350 IRFB9N30APbF HEXFET® Power MOSFET D VDSS = 300V RDS(on) = 0.
45Ω G ID = 9.
3A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of ast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at lower dissipation levels to approximately 50 watts.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Aval...


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