Part Number
|
IXFT12N100 |
Manufacturer
|
IXYS |
Description
|
Power MOSFETs |
Published
|
Jan 8, 2016 |
Detailed Description
|
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFT10N100 IXFT12N100 IXFT13N10...
|
Datasheet
|
IXFT12N100
|
Overview
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFT10N100 IXFT12N100 IXFT13N100
V DSS
I
D25
1000 V 10 A
1000 V 12 A
1000 V 12.
5 A
trr £ 250 ns
R DS(on)
1.
20 W 1.
05 W 0.
90 W
Preliminary data sheet
Symbol V
DSS
VDGR V
GS
VGSM ID25
IDM
IAR
EAR dv/dt
P D
TJ T
JM
Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque
Maximum Ratings
10N100 12N100 13N100 ...
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