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IXFT12N100

IXYS
Part Number IXFT12N100
Manufacturer IXYS
Description Power MOSFETs
Published Jan 8, 2016
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N10...
Datasheet PDF File IXFT12N100 PDF File

IXFT12N100
IXFT12N100

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT10N100 IXFT12N100 IXFT13N100 V DSS I D25 1000 V 10 A 1000 V 12 A 1000 V 12.
5 A trr £ 250 ns R DS(on) 1.
20 W 1.
05 W 0.
90 W Preliminary data sheet Symbol V DSS VDGR V GS VGSM ID25 IDM IAR EAR dv/dt P D TJ T JM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque Maximum Ratings 10N100 12N100 13N100 ...


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