Part Number
|
IXTH12N120 |
Manufacturer
|
IXYS |
Description
|
Power MOSFET |
Published
|
Jan 9, 2016 |
Detailed Description
|
Power MOSFET, Avalanche Rated High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)...
|
Datasheet
|
IXTH12N120
|
Overview
Power MOSFET, Avalanche Rated High Voltage
Preliminary Data Sheet
IXTH 12N120
VDSS = 1200 V
ID (cont) = 12 A
RDS(on)=
1.
4 Ω
Symbol Test Conditions
VDSS VDGR
VGS VGSM
ID25 IDM IAR
EEAARS
PD
TJ TJM Tstg
Md
Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM
TTCC
= 25°C = 25°C
TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s
Maximum Ratings
1200 1200
V V
±30 V ±40 V
12 A 48 A 12 A
30 mJ 1.
0 J
500 W
-55 .
.
.
+150 150
-55 .
.
.
+150
°C °C °C
1.
13/10 Nm/lb.
in.
6g
300 °C
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB = Drain
Features
z In...
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