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IXTH12N120

IXYS
Part Number IXTH12N120
Manufacturer IXYS
Description Power MOSFET
Published Jan 9, 2016
Detailed Description Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)...
Datasheet PDF File IXTH12N120 PDF File

IXTH12N120
IXTH12N120

Overview
Power MOSFET, Avalanche Rated High Voltage Preliminary Data Sheet IXTH 12N120 VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.
4 Ω Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EEAARS PD TJ TJM Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TTCC = 25°C = 25°C TC = 25°C Mounting torque Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 1200 1200 V V ±30 V ±40 V 12 A 48 A 12 A 30 mJ 1.
0 J 500 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
6g 300 °C TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain Features z International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 0 V, ID = 1 mA VDS ...


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