PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 6mΩ @VGS = 4.
5V ID 55A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 55 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 35 19 Pulsed Drain Current1 TA = 70 °C IDM 15 100 Avalanche Current IAS 32 Avalanche Energy L = 0.
1mH EAS 51 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12.
5 3.
6 TA = 70 °C 2.
3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESIS...

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