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PE5A0DZ

UNIKC
Part Number PE5A0DZ
Manufacturer UNIKC
Description Dual N-Channel Enhancement Mode MOSFET
Published Jan 9, 2016
Detailed Description PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 6mΩ @VGS = 4.5V ID 55A PDFN 3X...
Datasheet PDF File PE5A0DZ PDF File

PE5A0DZ
PE5A0DZ

Overview
PE5A0DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 6mΩ @VGS = 4.
5V ID 55A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 55 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 35 19 Pulsed Drain Current1 TA = 70 °C IDM 15 100 Avalanche Current IAS 32 Avalanche Energy L = 0.
1mH EAS 51 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C PD 12.
5 3.
6 TA = 70 °C 2.
3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RJA 35 Junction-to-case RJC 4 1Pulse width limited by maximum junction temperature.
2Package limitation current is 18A.
3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environmen...


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