Part Number
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FDJ128N |
Manufacturer
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Fairchild Semiconductor |
Description
|
N-Channel 2.5 Vgs Specified PowerTrench MOSFET |
Published
|
Jan 14, 2016 |
Detailed Description
|
FDJ128N
August 2004
FDJ128N
N-Channel 2.5 Vgs Specified PowerTrench MOSFET
General Description
This N-Channel -2.5V ...
|
Datasheet
|
FDJ128N
|
Overview
FDJ128N
August 2004
FDJ128N
N-Channel 2.
5 Vgs Specified PowerTrench MOSFET
General Description
This N-Channel -2.
5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications
• Battery management
Features
• 5.
5 A, 20 V.
RDS(ON) = 35 mΩ @ VGS = 4.
5 V RDS(ON) = 51 mΩ @ VGS = 2.
5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Compact industry standard SC75-6 surface mount package
G S S
SSS
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(...
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