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FDJ128N

Fairchild Semiconductor
Part Number FDJ128N
Manufacturer Fairchild Semiconductor
Description N-Channel 2.5 Vgs Specified PowerTrench MOSFET
Published Jan 14, 2016
Detailed Description FDJ128N August 2004 FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V ...
Datasheet PDF File FDJ128N PDF File

FDJ128N
FDJ128N

Overview
FDJ128N August 2004 FDJ128N N-Channel 2.
5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.
5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
Applications • Battery management Features • 5.
5 A, 20 V.
RDS(ON) = 35 mΩ @ VGS = 4.
5 V RDS(ON) = 51 mΩ @ VGS = 2.
5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package G S S SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (...


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