FDJ127P July 2004 FDJ127P P-Channel -1.
8 Vgs Specified PowerTrench MOSFET General Description This P-Channel -1.
8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process.
It has been optimized for battery power management applications.
Applications • Battery management • Load switch Features • –4.
1 A, –20 V.
RDS(ON) = 60 mΩ @ VGS = –4.
5 V RDS(ON) = 85 mΩ @ VGS = –2.
5 V RDS(ON) = 133 mΩ @ VGS = –1.
8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC75-6 surface mount package G S S SC75-6 FLMP SSS Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source ...

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