NTLJF1103P
Product Preview Power MOSFET and
Schottky Diode
−8 V, −4.
3 A, mCool] P−Channel, with 2.
0 A
Schottky Barrier Diode, 2x2 mm, WDFN Package
Features
• WDFN 2x2 mm Package with Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package • 1.
5 V VGS Rated RDS(on) • Low VF, 2 A
Schottky Diode • Low Profile ( 0.
8 mm) for Easy Fit in Thin Environment • This is a Pb−Free Device
Applications
• DC−DC Buck Converter • Low Voltage Hard Disk DC Power Source
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current
(Note 1)
Power Dissipation (Note 1)
Continuous Drai...