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NTLJF1103P

ON Semiconductor
Part Number NTLJF1103P
Manufacturer ON Semiconductor
Description Power MOSFET and Schottky Diode
Published Jan 15, 2016
Detailed Description NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.3 A, mCool] P−Channel, with 2.0 A Schottky Barrier...
Datasheet PDF File NTLJF1103P PDF File

NTLJF1103P
NTLJF1103P

Overview
NTLJF1103P Product Preview Power MOSFET and Schottky Diode −8 V, −4.
3 A, mCool] P−Channel, with 2.
0 A Schottky Barrier Diode, 2x2 mm, WDFN Package Features • WDFN 2x2 mm Package with Exposed Drain Pad for Excellent Thermal Conduction • Footprint Same as SC−88 Package • 1.
5 V VGS Rated RDS(on) • Low VF, 2 A Schottky Diode • Low Profile (< 0.
8 mm) for Easy Fit in Thin Environment • This is a Pb−Free Device Applications • DC−DC Buck Converter • Low Voltage Hard Disk DC Power Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drai...


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