Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L http://onsemi.
com Features • ON-resistance RDS(on)1=29.
5mΩ(typ.
) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001 • Input capacitance Ciss=4360pF (typ.
) Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --38 --152 1.
65 65 Unit V V A A W W Continued on next page.
Package Dimensions unit : mm (typ) 7535-001 2SJ661-1E 2SJ661-DL-1E 10.
0 4.
5 8.
0 1.
3 10.
0 4.
5 8.
0 ...

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