Part Number
|
MTB9N25E |
Manufacturer
|
ON Semiconductor |
Description
|
High Energy Power FET |
Published
|
Jan 18, 2016 |
Detailed Description
|
MTB9N25E
Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Si...
|
Datasheet
|
MTB9N25E
|
Overview
MTB9N25E
Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET D2PAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices a...
Similar Datasheet