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MTB9N25E

ON Semiconductor
Part Number MTB9N25E
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Jan 18, 2016
Detailed Description MTB9N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Si...
Datasheet PDF File MTB9N25E PDF File

MTB9N25E
MTB9N25E

Overview
MTB9N25E Designer’s™ Data Sheet TMOS E−FET.
™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices a...


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