MCH6663 Power MOSFET 30V, 188mΩ, 1.
8A, −30V, 325mΩ, −1.
5A, Complementary Dual www.
onsemi.
com Features • ON-Resistance Nch : RDS(on)1=145mΩ (typ) Pch : RDS(on)1=250mΩ (typ) • 4V Drive • Complementary N-Channel and P-Channel MOSFET • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol N-channel P-channel Drain to Source Voltage VDSS 30 −30 Gate to Source Voltage VGSS ±20 ±20 Drain Current (DC) ID 1.
8 −1.
5 Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 7.
2 −6 Power Dissipation When mounted on ceramic substrate (900mm2×0.
8mm) 1unit Junction Temperature PD Tj 0.
8 150 Storage Temperature Tstg −55 to +150 Unit V V ...

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