DatasheetsPDF.com

MCH6604

ON Semiconductor
Part Number MCH6604
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 9, 2016
Detailed Description Ordering number : EN6459C MCH6604 N-Channel Power MOSFET 50V, 0.25A, 7.8Ω, Dual MCPH6 http://onsemi.com Features • Lo...
Datasheet PDF File MCH6604 PDF File

MCH6604
MCH6604

Overview
Ordering number : EN6459C MCH6604 N-Channel Power MOSFET 50V, 0.
25A, 7.
8Ω, Dual MCPH6 http://onsemi.
com Features • Low ON-resistance • Ultrahigh-speed switching • 1.
5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
8mm)1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model Ratings 50 ±10 0.
25 1 0.
8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7022A-006 2.
0 654 0.
15 MCH6604-TL-E Product & Package Information • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs.
/reel Packing Type : TL Marking 2.
1 0.
07 0.
85 0.
25 1.
6 0.
25 LOT No.
LOT No.
0 to 0.
02 FD 1 23 0.
65 0.
3 123 654 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 MCPH6 TL Electrical Connection 65 4 12 3 Semiconductor Components Industries, LLC, 2013 August, 2013 82813 TKIM TC-00002988/71112 TKIM/52506PE MSIM TB-00002287/ No.
6459-1/6 60100 TS (KOTO) TA-2459 MCH6604 Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)