2SA1415 / 2SC3645
Ordering number : EN1720B
2SA1415 / 2SC3645
PNP /
NPN Epitaxial Planar Silicon
Transistors
High-Voltage Switching, Predriver Applications
Features
• Adoption of FBET process.
• High breakdown voltage (VCEO=160V).
• Excellent linearity of hFE and small Cob.
• Fast switching speed.
• Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs.
Specifications ( ) : 2SA1415
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature Marking : 2SA1415 : AA, 2SC3645: CA
Symbol VCBO VCE...