CEH2321A
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-20V, -4.
8A, RDS(ON) = 55mΩ @VGS = -4.
5V.
RDS(ON) = 75mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
TSOP-6 package.
4 5 6
3 2 1 TSOP-6
G(3)
D(1,2,5,6,) S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID -4.
8 IDM -19.
2
Maximum Power Dissipation
PD 2.
0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to...