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CEH2321

CET
Part Number CEH2321
Manufacturer CET
Description P-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = ...
Datasheet PDF File CEH2321 PDF File

CEH2321
CEH2321

Overview
CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.
8A, RDS(ON) = 55mΩ @VGS = -4.
5V.
RDS(ON) = 80mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C ±12 -4.
8 -19.
2 2.
0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol Rθ...


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