PPJD50N10AL 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A25mΩ  RDS(ON) , VGS@4.
5V, ID@15A28.
5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data TO-252  Case : TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx.
Weight : 0.
0104 ounces, 0.
297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC...

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