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PJD50N10AL-AU

Part Number	PJD50N10AL-AU
Manufacturer	PAN JIT
Description	100V N-Channel MOSFET
Published	Jun 25, 2023
Detailed Description	PPJD50N10AL-AU 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@...
Datasheet	PJD50N10AL-AU PDF File

Overview

PPJD50N10AL-AU 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 42 A Features  RDS(ON) , VGS@10V, ID@20A<25mΩ  RDS(ON) , VGS@4.
5V, ID@15A<28.
5mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.
0  Green molding compound as per IEC 61249 standard Mechanical Data  Case: TO-252AA Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
0104 ounces, 0.
297 grams TO-252AA Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25oC ...

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