Part Number
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PXAC182002FC |
Manufacturer
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Infineon |
Description
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Thermally-Enhanced High Power RF LDMOS FET |
Published
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Jan 26, 2016 |
Detailed Description
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PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a...
|
Datasheet
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PXAC182002FC
|
Overview
PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182002FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA sign...
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