DatasheetsPDF.com

PXAC182002FC

Part Number	PXAC182002FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jan 26, 2016
Detailed Description	PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PXAC182002FC is a...
Datasheet	PXAC182002FC PDF File

Overview

PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.
Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC182002FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz, 3GPP WCDMA sign...

Similar Datasheet

PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)