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Part Number
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1SS226 |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Switching Diodes |
|
Published
|
Mar 23, 2005 |
|
Detailed Description
|
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) AEC-Q101 q...
|
|
Datasheet
|
1SS226
|
Overview
Switching Diodes Silicon Epitaxial Planar
1SS226
1.
Applications
• Ultra-High-Speed Switching
2.
Features
(1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact our sales.
3.
Packaging and Internal Circuit
S-Mini
1SS226
1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2
©2017-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1982-09
2022-11-22 Rev.
7.
0
1SS226
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
Peak forward current Average rectified current
IFM
(Note 1)
IO
(Note 1)
300
mA
100
Power...
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