DatasheetsPDF.com

1SS201

Toshiba Semiconductor
Part Number 1SS201
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3)...
Datasheet PDF File 1SS201 PDF File

1SS201
1SS201

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.
9V (typ.
) Fast reverse recovery time : trr = 1.
6ns (typ.
) Small total capacitance : CT = 0.
9pF (typ.
) 1SS201 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 (*) mA Average forward current IO 100 (*) mA Surge current (10ms) IFSM 2 (*) A Power dissipation P 200 mW JEDEC ― Junction temperature Storage temperature range Tj Tstg 125 °C EIAJ ― −55~125 °C TOSHIBA Weight: 0.
13g 1−4E2A (*) Unit rating.
Total rating ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)