Part Number
|
1SS272 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Silicon Epitaxial Planar Type Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS272
Ultra High Speed Switching Application
Low forward voltage
: VF (...
|
Datasheet
|
1SS272
|
Overview
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS272
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.
92V (typ.
)
Fast reverse recovery time : trr = 1.
6ns (typ.
)
Small total capacitance : CT = 0.
9pF (typ.
)
1SS272
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2*
A
Power dissipation
PD (Note 1, 3)
200 *
mW
PD (Note 2)
150
Junction temperature
Tj (Note 1)
150
°C
Tj (Note 2)
125
Storage temperature
Tstg (Note 1) −55 to 150 °C
...
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