Part Number
|
1SS293 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low ...
|
Datasheet
|
1SS293
|
Overview
TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage Low reverse surrent Small package
: VF (3) = 0.
54V (typ.
) : IR = 5µA (max)
1SS293
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range
Symbol
VRM VR IFM IO P Tj Tstg
Rating
Unit
45 V
40 V
300 mA
100 mA
300 mW JEDEC
125 °C EIAJ −55~125 °C TOSHIBA
Weight: 0.
13g
― SC−61 2−3J1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance
Symbol
VF (1) VF (2) VF (...
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