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Part Number
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RU6581R |
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Manufacturer
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Ruichips |
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Description
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N-Channel Advanced Power MOSFET |
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Published
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Jan 29, 2016 |
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Detailed Description
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RU6581R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 65V/81A, RDS (ON) =7mΩ(Typ.)@VGS=10V
• Super High Dense Cell ...
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Datasheet
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RU6581R
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Overview
RU6581R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 65V/81A, RDS (ON) =7mΩ(Typ.
)@VGS=10V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO-220
Applications
• Switching Application Systems • UPS
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current(VGS=10V)
PD Maxim...
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