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RU6581L

Ruichips
Part Number RU6581L
Manufacturer Ruichips
Description N-Channel Advanced Power MOSFET
Published Jan 29, 2016
Detailed Description RU6581L N-Channel Advanced Power MOSFET MOSFET Features • 65V/81A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell ...
Datasheet PDF File RU6581L PDF File

RU6581L
RU6581L

Overview
RU6581L N-Channel Advanced Power MOSFET MOSFET Features • 65V/81A, RDS (ON) =7mΩ(Typ.
)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • Switching Application Systems • UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maxim...


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