Part Number
|
1SV252 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV252
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Ch...
|
Datasheet
|
1SV252
|
Overview
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV252
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Forward current Junction temperature Storage temperature range
Symbol
VR IF Tj Tstg
Rating
50 50 125 -55~125
Unit
V mA °C °C
1SV252
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage Reverse current Forward voltage Total capacitance Series resistance
VR IR = 10 mA IR VR = 50 V VF IF = 50 mA (Note) CT VR = 50 V, f = 1 MHz rs IF = 10 mA, f = 100 MHz
Note: CT is measured by 3 terminal method with capacitance bridge.
Marking
JEDEC
―
JEITA
SC-70
TOSHIBA
1-2P1C
Weight: 0.
006 g (typ...
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