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1SV217

Toshiba Semiconductor
Part Number 1SV217
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV217 CATV Tuning · High capacitance ratio: C2 V/C25 ...
Datasheet PDF File 1SV217 PDF File

1SV217
1SV217

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV217 CATV Tuning · High capacitance ratio: C2 V/C25 V = 12.
5 (typ.
) · Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV217 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V rs IR = 1 mA VR = 28 V VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz ¾ VR = 5 V, f = 470 MHz Note 1: Available in matched group for capacitance to 2.
5%.
C (max) - C (min) C (min) =< 0.
025 (VR = 2~25 V) Marking JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.
004 g (typ.
) Min Typ.
Max Unit 30 ¾ 33 2.
6 11.
5 ¾ ¾ ¾ 36 2.
88 12.
5 0.
83 ¾ 10 39 3.
2...


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