Part Number
|
1SV262 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Variable Capacitance Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
1SV262
CATV Tuning
Unit: mm
• High capacitan...
|
Datasheet
|
1SV262
|
Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
1SV262
CATV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 12.
5 (typ.
) • Low series resistance: rs = 0.
6 Ω (typ.
) • Excellent C-V characteristics, and small tracking error.
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Peak reverse voltage Junction temperature Storage temperature range
VR VRM
Tj Tstg
34 36 (RL = 10 kΩ)
125 −55~125
V V °C °C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability s...
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