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1SV262

Part Number 1SV262
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 1SV262 CATV Tuning Unit: mm • High capacitan...
Datasheet 1SV262




Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 1SV262 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 12.
5 (typ.
) • Low series resistance: rs = 0.
6 Ω (typ.
) • Excellent C-V characteristics, and small tracking error.
• Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Peak reverse voltage Junction temperature Storage temperature range VR VRM Tj Tstg 34 36 (RL = 10 kΩ) 125 −55~125 V V °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability s...






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