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1SV269

Part Number 1SV269
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning · High capacitance ratio: C2 V/C25 ...
Datasheet 1SV269




Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning · High capacitance ratio: C2 V/C25 V = 11.
5 (typ.
) · Low series resistance: rs = 0.
55 Ω (typ.
) · Excellent C-V characteristics, and small tracking error.
· Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 34 36 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV269 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Capacitance ratio Series resistance VR IR = 1 mA IR VR = 32 V ...






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