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1SV279

Part Number 1SV279
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio • High capaci...
Datasheet 1SV279




Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 1SV279 VCO for V/UHF Band Radio • High capacitance ratio: C2V / C10V = 2.
5 (typ.
) • Low series resistance: rs = 0.
2 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/cu...






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