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1SV281

Part Number 1SV281
Manufacturer Toshiba Semiconductor
Description VARIABLE CAACITANCE DIODE
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 1SV281 VCO for V/UHF Band Radio • High capaci...
Datasheet 1SV281




Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 1SV281 VCO for V/UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.
0 (typ.
) • Low series resistance: rs = 0.
28 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/v...






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