Part Number
|
1SV281 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
VARIABLE CAACITANCE DIODE |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
• High capaci...
|
Datasheet
|
1SV281
|
Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.
0 (typ.
) • Low series resistance: rs = 0.
28 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage Junction temperature Storage temperature range
VR 10 V
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/v...
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