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1SV291

Part Number 1SV291
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning · High capacitance ratio: C2 V/C...
Datasheet 1SV291




Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning · High capacitance ratio: C2 V/C25 V = 7.
6 (typ.
) · Low series resistance: rs = 1.
9 Ω (typ.
) · Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV291 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V r...






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