Part Number
|
1SV291 |
Manufacturer
|
Toshiba Semiconductor |
Description
|
Variable Capacitance Diode |
Published
|
Mar 23, 2005 |
Detailed Description
|
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV291
UHF SHF Tuning
· High capacitance ratio: C2 V/C...
|
Datasheet
|
1SV291
|
Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV291
UHF SHF Tuning
· High capacitance ratio: C2 V/C25 V = 7.
6 (typ.
) · Low series resistance: rs = 1.
9 Ω (typ.
) · Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Peak reverse voltage Junction temperature Storage temperature range
Symbol
VR VRM
Tj Tstg
Rating
30 35 (RL = 10 kW)
125 -55~125
Unit
V V °C °C
1SV291
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
VR IR C2 V C25 V C2 V/C25 V r...
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