PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free VDSS R D S (o n ) typ.
max.
ID (Silicon Limited) 100V 7.
2m: 9.
0m: 97A DD G G Gate S D G TO-247AC S D Drain S Source Absolute Maxim um Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @T C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS...

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