Part Number
|
IRFU2607ZPbF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Jan 30, 2016 |
Detailed Description
|
PD - 95953A
IRFR2607ZPbF IRFU2607ZPbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operatin...
|
Datasheet
|
IRFU2607ZPbF
|
Overview
PD - 95953A
IRFR2607ZPbF IRFU2607ZPbF
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
G
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 22mΩ
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S ID = 42A
D-Pak
I-Pak
IRFR2...
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